By Yoon Soo Park (Eds.)
This quantity addresses the topic of fabrics technology, in particular the fabrics facets, equipment functions, and fabricating expertise of SiC.
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Extra resources for Si: C Materials and Devices
Ed. The Physics and Chemistry of Carbides, Nitrides and Borides. E: Applied Sciences. Vol. 185. 1990, Kluwer Academic Publishers: Dordrecht. 19. Guth, J. and Petuskey, W. , J . Phys. Chem. Solids, 1987. 48, 541-549. 20. Hannam, A. L. and Schaffer, P. T. , J . Appl. , 1969. 2, 45. 21. Harris, G. , ed. Properties of Silicon Carbide. EMIS datareview series, ed. B. L. Weiss. Vol. 13. 1995, INSPEC London. 22. , ed. Landolt-Bornstein, Numerical Data and Functional Relationships in Science and Technology.
Hamilton, D. , and Choyke, W. , Phys. , 1963. 132, 2023. 34. , Hamilton, D. , and Choyke, W. , Phys. , 1966. 143, 526. 35. Philipp, H. R. and Taft, E. A,, in Silicon Carbide- A High Temperature Semiconductor, J. R. O’Connor and J. Smiltens, Editors. 1960, Pergamon Press: Oxford. p. 366. 36. Powder diffraction file 29-1130, JCPDS-ICDD International Center for Powder Diffraction Data, Swarthmore, PA. 20 KENNETHJARRENDAHL AND ROBERTF. DAVIS 37. Powder diffraction file 29-1129, JCPDS-ICDD International Center for Powder Diffraction Data, Swarthmore, PA.
N-type Sic crystals with carrier concentrations up to 1020cm-3were produced using nitrogen doping [113, 1561 (Fig. 8). 8 mR cm, respectively . No informatijon on defect density in highly doped n-type material is available. P-type Sic crystals with carrier concentrations up to lozocm- were obtained using aluminum doping . lnformation about A1 doping during bulk S i c growth is limited. No information on defect density in highly doped p-type material is available. Semi-insulating 6H-Sic crystals were produced using vanadium doping 2 Sic FABRICATION TECHNOLOGY: GROWTH AND DOPING 1017 1019 33 1020 Carrier Concentration (cm”) FIG.
Si: C Materials and Devices by Yoon Soo Park (Eds.)